參數(shù)資料
型號: 2SK4076-ZK-E1-AY
元件分類: 小信號晶體管
英文描述: 35000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封裝: LEAD FREE, TO-252, MP-3ZK, 3 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 112K
代理商: 2SK4076-ZK-E1-AY
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MOS FIELD EFFECT TRANSISTOR
2SK4076
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18224EJ1V0DS00 (1st edition)
Date Published July 2006 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK4076 is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4076-ZK-E1-AY
2SK4076-ZK-E2-AY
Pure Sn (Tin)
Tape
2500 p/reel
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
Low on-state resistance
RDS(on)1 = 16 m
Ω MAX. (VGS = 10 V, ID = 17.5 A)
RDS(on)2 = 25 m
Ω MAX. (VGS = 4.5 V, ID = 8 A)
Low Ciss: Ciss = 1200 pF TYP.
Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±35
A
Drain Current (pulse)
Note1
ID(pulse)
±70
A
Total Power Dissipation (TC = 25°C)
PT1
26
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
17
A
Single Avalanche Energy
Note2
EAS
29
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25
Ω, VGS = 20 → 0 V, L = 100
μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
4.8
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
(TO-252)
2006
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