參數(shù)資料
型號: 2SK4077-ZK-E2-AY
元件分類: 小信號晶體管
英文描述: 20000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封裝: LEAD FREE, TO-252, MP-3ZK, 3 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 169K
代理商: 2SK4077-ZK-E2-AY
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MOS FIELD EFFECT TRANSISTOR
2SK4077
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18461EJ1V0DS00 (1st edition)
Date Published November 2006 NS CP(K)
Printed in Japan
2006
DESCRIPTION
The 2SK4077 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4077-ZK-E1-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
2SK4077-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
Low on-state resistance
RDS(on)1 = 20 m
Ω MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 35 m
Ω MAX. (VGS = 4.5 V, ID = 5 A)
Low input capacitance
Ciss = 800 pF TYP.
Logic level drive type
Built in gate to source protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±20
A
Drain Current (pulse)
Note1
ID(pulse)
±40
A
Total Power Dissipation (TC = 25
°C)
PT1
20
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
10
A
Single Avalanche Energy
Note2
EAS
10
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch
= 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L=100
μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
6.25
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
(TO-252)
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