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參數(shù)資料
| 型號： | 2SK4078 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 開關(guān)N溝道功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 182K |
| 代理商： | 2SK4078 |
Data Sheet D18885EJ1V0DS
6
2SK4078
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5
±
0.2
5.1 TYP.
4.3 MIN.
2.3
±
0.1
0.5
±
0.1
0.76
±
0.12
0 to 0.25
0.5
±
0.1
1.0
No Plating
No Plating
1
6
±
0
0
4
.
0
1
1
4
2
3
1.14 MAX.
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK4078-ZK-E1-AY | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4078-ZK-E2-AY | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK40 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK400 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-247VAR |
| 2SK401 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4078B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4078B-ZK-E1-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4078B-ZK-E2-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4078-ZK-E1-AY | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4078-ZK-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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