參數(shù)資料
型號: 2SK4080-ZK-E2-AY
元件分類: 小信號晶體管
英文描述: 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封裝: LEAD FREE, TO-252, MP-3ZK, 3 PIN
文件頁數(shù): 5/8頁
文件大?。?/td> 190K
代理商: 2SK4080-ZK-E2-AY
Data Sheet D18214EJ2V0DS
5
2SK4080
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
R
DS
(o
n)
-Dr
ai
nto
Sourc
eOn-st
ate
Re
sist
ance
-m
Ω
0
5
10
15
20
25
-75
-25
25
75
125
175
10 V
VGS = 4.5 V
ID = 24 A
Pulsed
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rs
s-
Capacitanc
e
-pF
10
100
1000
10000
0.1
1
10
100
VGS = 0 V
f = 1 MHz
C iss
C oss
C rss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(on)
,t
r,
t
d(of
f),
t
f-
S
w
itching
Time
-
ns
1
10
100
0.1
1
10
100
tr
td(off)
td(on)
tf
VDD = 15 V
VGS = 12 V
RG = 3
Ω
ID - Drain Current - A
V
DS
-Dr
ai
nto
Source
V
ol
tage
-
V
0
5
10
15
20
25
30
0
102030
40
0
2
4
6
8
10
12
VDS
ID = 30 A
VGS
VDD = 24 V
15 V
6 V
QG - Gate Chage - nC
V
GS
-
Gate
to
Source
V
oltage
-
V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
I
F-
diode
Forward
Current
-
A
0.01
0.1
1
10
100
1000
00.511.5
VGS = 10 V
0 V
Pulsed
4.5 V
VF(S-D) - Source to Drain Voltage - V
t
rr
-
Rev
erse
R
ecovery
Time
-n
s
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
μs
VGS = 0 V
ID - Drain Current - A
相關PDF資料
PDF描述
2SK4080-ZK-E2-AY 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK4080-ZK-E1-AY 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK4080(1)-S27-AY 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK4080-ZK-E1-AY 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK4080-S15-AY 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
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