參數(shù)資料
型號: 2SK4125
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Silicon MOSFET General-Purpose Switching Device
中文描述: N溝道MOSFET的硅通用開關(guān)設(shè)備
文件頁數(shù): 1/5頁
文件大?。?/td> 60K
代理商: 2SK4125
2SK4125
No. A0747-1/5
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
mJ
A
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
600
±
30
17
52
2.5
170
150
PW
10
μ
s, duty cycle
1%
Allowable Power Dissipation
PD
Tc=25
°
C (SANYO’s ideal heat dissipation condition)
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
*
1 VDD=99V, L=500
μ
H, IAV=17A
*
2 L
500
μ
H, single pulse
Marking : K4125
Tch
Tstg
EAS
IAV
--55 to +150
86.5
17
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0747
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
51607QB TI IM TC-00000701
SANYO Semiconductors
DATA SHEET
2SK4125
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相關(guān)PDF資料
PDF描述
2SK4126 N-Channel Silicon MOSFET General-Purpose Switching Device
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK4125_0712 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
2SK4125_12 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
2SK4125-1E 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶體管極性:N-Channel 汲極/源極擊穿電壓:30 V 閘/源擊穿電壓: 漏極連續(xù)電流:180 mA 電阻汲極/源極 RDS(導(dǎo)通):4.5 Ohms 配置: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-416 封裝:Reel
2SK4125-1EX 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES
2SK4126 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube