參數(shù)資料
型號: 2SK4164
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Silicon MOSFET General-Purpose Switching Device
中文描述: N溝道MOSFET的硅通用開關設備
文件頁數(shù): 2/4頁
文件大小: 61K
代理商: 2SK4164
2SK4164
No. A0736-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=20V, VGS=10V, ID=100A
VDS=20V, VGS=10V, ID=100A
VDS=20V, VGS=10V, ID=100A
IS=100A, VGS=0V
1.2
46
2.6
V
S
77
2.5
3.6
Static Drain-to-Source On-State Resistance
3.3
5.0
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
11500
1500
1200
70
1050
710
650
220
34
47
0.9
1.2
Package Dimensions
unit : mm (typ)
7002-001
Switching Time Test Circuit
Avalanche Resistance Test Circuit
7.8
3
8.2
0
0
4
1.0
2.54
1.0
2.54
5.08
8
1
1
0.3
0.6
0.6
0
7.8
5
6
10.0
6.0
2
1
2
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
PW=10
μ
s
D.C.
1%
10V
0V
VIN
P.G
50
G
S
ID=50A
RL=0.4
VDD=20V
VOUT
VIN
D
2SK4164
50
10V
0V
50
VDD
L
2SK4164
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