型號: | 2SK4164 |
廠商: | Sanyo Electric Co.,Ltd. |
英文描述: | N-Channel Silicon MOSFET General-Purpose Switching Device |
中文描述: | N溝道MOSFET的硅通用開關設備 |
文件頁數(shù): | 2/4頁 |
文件大小: | 61K |
代理商: | 2SK4164 |
相關PDF資料 |
PDF描述 |
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2SK416 | HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
2SK416L | HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
2SK416S | HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
2SK427T | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
2SK427U | TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 7.3MA I(DSS) | SPAK |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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2SK416L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
2SK416S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
2SK417 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2SK417 |
2SK4171 | 功能描述:MOSFET N-CH 60V 100A TO220-3 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
2SK4177 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |