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參數(shù)資料
| 型號： | 2SK522-F |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SK522-F |
2SK522
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
–30
V
Gate current
I
G
10
mA
Drain current
I
D
20
mA
Channel power dissipation
Pch
200
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V
(BR)GDO
–30
—
V
I
G = –100 A, IS = 0
Gate cutoff current
I
GSS
—
–10
nA
V
GS = –0.5 V, VDS = 0
Drain current
I
DSS*
1
4
—
20
mA
V
DS = 5 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
——
–3
V
DS = 5 V, ID = 10 A
Forward transfer admittance
fs
y
8
10
—
mS
V
DS = 5 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
6.8
—
pF
V
DS = 5 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance
Crss
—
0.1
—
pF
Power gain
PG
20
27
—
dB
V
DS = 5 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
1.7
2.5
dB
Note:
1. The 2SK522 is grouped by I
DSS as follows.
Drain
D
E
F
I
DSS
4 to 8
6 to 10
10 to 20
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| 2SK522ERR | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
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| 2SK522FTZ | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 2SK522FTZ | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 2SK522DRF | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK525 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SK526 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MOTOR AND SOLENOID DRIVE APPLICATIONS |
| 2SK527 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220VAR |
| 2SK528 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220VAR |
| 2SK529 | 制造商:Toshiba America Electronic Components 功能描述: |
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