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參數(shù)資料
| 型號(hào)： | 2SK740 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 2SK740 |
2SK740
4
5
4
3
2
1
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5 A
2 A
ID = 10 A
PulseTest
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
0.5
0.2
0.1
0.05
0.005
1.0
2
5
10
50
Drain Current ID (A)
0.5
Static Drain to Source on State
Resistance vs. Drain Current
20
0.02
0.01
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
15 V
VGS = 10 V
Pulse Test
0.5
0.4
0.3
0.2
0.1
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
2 A
5 A
10 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
0.5
0.2
0.5
1.0
5
10
20
1.0
2
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
–25°C
Ta = 25°C
75°C
VGS = 10 V
Pulse Test
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PDF描述 |
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| 2SK771 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK787 | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK830 | 15 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK831 | 18 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK872 | 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK740(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK741 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK757 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | SOT-186 |
| 2SK758 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-channel Power F-MOS FET |
| 2SK759 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-channel Power F-MOS FET |
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