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參數(shù)資料
| 型號(hào)： | 2SK875 |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 3358K |
| 代理商： | 2SK875 |
Data Sheet D13332EJ3V0DS
2
2SK3109
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
4.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 5.0 A
1.5
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 5.0 A
0.32
0.4
Input Capacitance
Ciss
VDS = 10 V,
400
pF
Output Capacitance
Coss
VGS = 0 V,
110
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
55
pF
Turn-on Delay Time
td(on)
VDD = 100 V, ID = 5.0 A,
12
ns
Rise Time
tr
VGS = 10 V,
34
ns
Turn-off Delay Time
td(off)
RG = 10
40
ns
Fall Time
tf
20
ns
Total Gate Charge
QG
VDD = 160 V,
18
nC
Gate to Source Charge
QGS
VGS = 10 V,
3.5
nC
Gate to Drain Charge
QGD
ID = 10 A
10
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 10 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 10 A, VGS = 0 V,
250
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
1.0
C
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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