參數(shù)資料
型號(hào): 2SK903MR
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3A I(D) | TO-220
中文描述: 晶體管| MOSFET的| N溝道| 800V的五(巴西)直| 3A條(?。﹟至220
文件頁數(shù): 5/9頁
文件大?。?/td> 47K
代理商: 2SK903MR
2SK1167, 2SK1168
5
10
8
4
2
0
4
8
12
16
20
6
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
10 A
ID = 5 A
20 A
5
2
1.0
0.5
0.05
1
2
5
20
50
100
Drain Current ID (A)
0.1
0.2
Pulse Test
10
VGS = 10 V
15 V
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
10 A
ID = 20 A
5 A
Forward Transfer Admittance vs. Drain Current
50
20
10
5
0.5
0.2
0.5
1.0
5
10
20
Drain Current ID (A)
1.0
2
75°C
–25°C
Forward
Transfer
Admittance
yfs
(S)
TC = 25°C
VDS = 20 V
Pulse Test
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