參數(shù)資料
型號: 2SK974(S)
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 60V的五(巴西)直| 3A條(?。﹟對252AA
文件頁數(shù): 2/7頁
文件大?。?/td> 39K
代理商: 2SK974(S)
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
V
(BR)DSS
60
voltage
———————————————————————————————————————————
Gate to source breakdown
V
(BR)GSS
±20
voltage
———————————————————————————————————————————
Gate to source leak current
I
GSS
———————————————————————————————————————————
Zero gate voltage drain current
I
DSS
———————————————————————————————————————————
Gate to source cutoff voltage
V
GS(off)
1.0
———————————————————————————————————————————
Static drain to source on state
R
DS(on)
resistance
Symbol
Min
Typ
Max
Unit
Test conditions
V
I
D
= 10 mA, V
GS
= 0
V
I
G
= ±100 μA, V
DS
= 0
±10
μA
V
GS
= ±16 V, V
DS
= 0
250
μA
V
DS
= 50 V, V
GS
= 0
2.0
V
I
D
= 1 mA, V
DS
= 10 V
0.12
———————
0.17
0.15
I
D
= 5 A, V
GS
= 10 V *
——————————–
I
D
= 5 A, V
GS
= 4 V *
0.22
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
3.5
———————————————————————————————————————————
Input capacitance
Ciss
————————————————————————————————
Output capacitance
Coss
————————————————————————————————
Reverse transfer capacitance
Crss
———————————————————————————————————————————
Turn-on delay time
t
d(on)
————————————————————————————————
Rise time
t
r
————————————————————————————————
Turn-off delay time
t
d(off)
————————————————————————————————
Fall time
t
f
———————————————————————————————————————————
Body to drain diode forward
V
DF
voltage
———————————————————————————————————————————
Body to drain diode reverse
t
rr
recovery time
———————————————————————————————————————————
* Pulse Test
6.0
S
I
D
= 5 A, V
DS
= 10 V *
400
pF
V
DS
= 10 V, V
GS
= 0,
220
pF
f = 1 MHz
60
pF
5
ns
I
D
= 5 A, V
GS
= 10 V,
55
ns
R
L
= 6
140
ns
90
ns
1.2
V
I
F
= 10 A, V
GS
= 0
125
ns
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 50 A/μs
2SK970
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