參數(shù)資料
型號: 2SK982
元件分類: 小信號晶體管
英文描述: 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: 2-5F1H, SC-43, TO-92, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 269K
代理商: 2SK982
2SK982
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK982
High Speed Switching Applications
Analog Switch Applications
Interface Applications
Excellent switching times: ton = 14 ns (typ.)
High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = 50 mA
Low on resistance: RDS (ON) = 0.6 (typ.) @ ID = 50 mA
Enhancement-mode
Complementary to 2SJ148
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
200
Drain current
Pulse
IDP
800
mA
Drain power dissipation
(Ta
= 25°C)
PD
400
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1H
Weight: 0.21 g (typ.)
相關PDF資料
PDF描述
2ST5949 17 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-3
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2STC4467 8 A, 120 V, NPN, Si, POWER TRANSISTOR
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