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參數資料
| 型號： | 3CN00175AA |
| 元件分類： | 通信、網絡模塊及開發(fā)工具 |
| 英文描述： | Telecomm/Datacomm |
| 中文描述： | 電信/數據通信 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 3CN00175AA |
Description
This Alcatel 1916 LMM contains an Alcatel
DFB laser with monolithically integrated
electro-absorption modulator (ILM). This
chip provides much lower dispersion
penalties than a directly modulated DFB,
without the complexity of LiNbO3 external
modulators. The Alcatel 1916 LMM is
optimized for ultra long-haul transmission
systems using non-dispersion shifted and
optical fiber amplifiers.
Features
Very low dispersion penalty over 750 km
of fiber for 2.5 Gbit/s operation
Optical characteristics
Parameter
Threshold current
Operating current
Optical output power
Laser forward voltage
Emission wavelength
(emitted-target) wavelength
Laser chip temperature range for tunability
Modulator bias voltage
Modulator drive voltage
Dynamic extinction ratio
Side mode suppression
Cut off frequency
RF return loss
Dispersion penalty
Tracking error
Wavelength selection according to ITU-T G.692
Industry-standard 14-pin butterfly package
High frequency butterfly package with
50
RF impedance
Low drive voltage (
≤
2 Vpp)
InGaAsP monolithically integrated DFB laser and
modulator chip
Internal optical isolator
Applications
STM-16 and OC-48 ultra long-haul
transmission systems
Terminals for submarine transmission systems
Digital WDM CATV transmission
Symb.
I
th
Iop
P
AVE
V
F
λ
m
λ
e
T
λ
V
bias
V
mod
DER
SMSR
S21
S11
s
TR
Conditions
CW, V
bias
= 0 V
CW, V
bias
= 0 V
I
op
, V
mod
, [1]
CW, I
op
, V
bias
= 0 V
Min
5
60
0
Typical
17
Max
35
80
Units
mA
mA
dBm
V
nm
nm
°C
V
V
dB
dB
GHz
dB
dB
dB
2
See table 1
See [3]
See [3]
See [1]
See [1]
See [1]
@ I
op
- 3 dB
DC to 3 GHz
See [1], [2], [3]
Tsubmount= 25 °C, Tcase = 65 °C
If = 100 mA, Q = 10 log [P65 °C)/P(25 °C)]
See [1], [2], 10%, 90%
I
op,
VM = - 5 V
T= 45 °C, I
op
= 100 mA, T
C
= 65 °C, V
bas
= - 1 V
T= 45 °C, I
op
= 100 mA, T
C
= 65 °C, V
bas
= - 1 V
- 0.1
20
- 1
+ 0.1
30
0
2
10
35
4
10
2
- 0.5
0.5
Rise time / Fall time
Wavelength drift vs Tcase
Monitor diode current
Dark current
TEC current
TEC voltage
Thermistor resistance
Notes :
All limits start of life Tcase = 25 °C, Tsubmount = 20 °C to 30 °C, Vr = - 5 V, unless otherwise stated.
[1] BER= 10
-10
; 2.488 Gbit/s modulaton; 2
23
-1 PRBS; NZRline code; DER
≥
10dB
[4] Tsubmount= T
λ
. T
λ
is chip temperature required to meettargetwavelength (see table 1)
Tr/Tf
λ
/
Tc
I
m
I
d
I
t
V
t
R
TH
140
0.5
1.5
0.1
1.3
2.5
10.5
ps
0.2
0.5
pm/°C
mA
μA
A
V
K
0.2
9.5
[2] 7200 ps/nmdispersion, assumng fiberwth an average dispersion of 18 ps/nm/km
[3] 12800 ps/nmdispersion, assumng fiberwth an average dispersion of 18 ps/nm/km
Absolute maximum ratings
Parameters
Operating case temperature
Storage temperature
Laser forward current
Laser reverse voltage
Modulator forward voltage
Modulator reverse voltage
Photodiode forward current
Photodiode reverse voltage
TEC Voltage
TEC Current
ESD applied on modulator
ESD applied on laser [1]
Lead soldering time (at 260°C)
Packing Mounting Screw Torque
[1] Human body model Stresses in excess of the absolute maxmum ratngs can cause permanentdamage to the device. These are absolute stress ratngs only.
Min
0
-40
Max
65
85
150
2
1
5
1
20
2.8
1.4
500
2000
10
0.2
Unit
°C
°C
mA
V
V
V
mA
V
V
A
V
V
s
nm
Alcatel 1916 LMM
12800 ps/nm WDM 2.5 Gbit/s digital Laser Module
with integrated electro-absorption Modulator
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