- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358641 > 3N100E (Motorola, Inc.) TMOS POWER FET 3.0 AMPERES 1000 VOLTS PDF資料下載
參數(shù)資料
| 型號： | 3N100E |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| 中文描述： | TMOS是功率場效應(yīng)晶體管3.0安培1000伏特 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 262K |
| 代理商： | 3N100E |
1
Motorola TMOS Power MOSFET Transistor Device Data
$#
" "!
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide
enhanced voltage–blocking capability without degrading perfor-
mance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
1000
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C, when mounted with the minimum recommended pad size
Operating and Storage Temperature Range
1000
Vdc
±
20
±
40
Vdc
Vpk
3.0
2.4
9.0
Adc
Apk
125
1.0
2.5
Watts
W/
°
C
Watts
TJ, Tstg
EAS
– 55 to 150
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 7.0 Apk, L = 10 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient, when mounted with the minimum recommended pad size
245
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
260
°
C
Order this document
by MTB3N100E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
3.0 AMPERES
1000 VOLTS
RDS(on) = 4.0 OHM
Motorola Preferred Device
CASE 418B–02, Style 2
D2PAK
D
S
G
REV 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3N128 | Silicon MOS Transistor |
| 3N142 | SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
| 3N153 | SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
| 3N154 | SILICON MOS TRANSISTOR |
| 3N161 | DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3N101 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS |
| 3N102 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS |
| 3N103 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS |
| 3N104 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS |
| 3N104-A000-S08 BF | 制造商:3M Electronic Products Division 功能描述:CONN PLUG 4POS A CODE PIN 制造商:3M Electronic Products Division 功能描述:PLUG M12 A CODE SOLDER 4WAY 制造商:3M Electronic Products Division 功能描述:PLUG, M12, A CODE, SOLDER, 4WAY 制造商:3M Electronic Products Division 功能描述:PLUG, M12, A CODE, SOLDER, 4WAY, Connector Type:Circular Industrial, Series:3N10 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。