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參數(shù)資料
| 型號： | 3SK252 |
| 廠商： | NEC Corp. |
| 英文描述： | N-Channel Silicon Dual-Gate MOSFET(應(yīng)用于RF放大器的N溝道雙門MOSFET) |
| 中文描述： | N溝道硅雙柵MOSFET（應(yīng)用于射頻放大器的? MOSFET的溝道雙門） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 3SK252 |
3SK252
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
– Drain to Source Voltage – V
I
D
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
G1S
– Gate1 to Source Voltage – V
I
D
0
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
G1S
– Gate1 to Source Voltage – V
|
f
|
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
– Drain Current – mA
|
f
|
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
– Gate2 to Source Voltage – V
C
i
V
G2S
= 3 V
V
G1S
= 1.6 V
0
5
10
15
20
25
5
10
V
DS
= 3.5 V
V
G2S
= 3.5 V
5
10
15
20
25
0.5
1.0
1.5
2.0
2.5
V
= 3.5 V
f = 1 kHz
0
8
16
24
32
40
0.5
1.0
1.5
2.0
2.5
V
= 3.5 V
f = 1 kHz
0
8
16
24
32
40
V
G2S
= 3.5 V
3.0 V
2.5 V
1.5 V
1.0 V
I
= 7 mA
(at V
DS
= 3.5 V,
V
= 3 V)
f = 1 MHz
–1.0
0
1.0
2.0
3.0
4.0
1.0
2.0
3.0
4.0
3.0 V
2.5 V
2.0 V
1.5 V
1.0 V
V
G2S
= 3.5 V
2.0 V
5.0
0
1.4 V
1.2 V
1.0 V
0.8 V
0.6 V
3.0 V
2.5 V
2.0 V
1.5 V
1.0 V
4
8
12
16
20
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
– Ambient Temperature – °C
P
D
0
100
25
50
75
100
125
200
300
400
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| 3SK254 | N-Channel Silicon Dual-Gate MOSFET(應(yīng)用于RF放大器的N溝道雙門MOSFET) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK253 | 制造商:NEC 制造商全稱:NEC 功能描述:RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
| 3SK254 | 制造商:NEC 制造商全稱:NEC 功能描述:RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
| 3SK254(NE93218) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 3SK255 | 制造商:NEC 制造商全稱:NEC 功能描述:RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
| 3SK255(NE93318) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
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