參數(shù)資料
型號: 3SK259
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: USQ, 2-2K1B, 4 PIN
文件頁數(shù): 1/6頁
文件大小: 174K
代理商: 3SK259
3SK259
2003-04-04
1
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
3SK259
TV Tuner, UHF RF Amplifier Applications
TV Tuner VHF Wide Band RF Amplifier Applications
Superior cross modulation performance.
Low reverse transfer capacitance: Crss = 0.025 pF (typ.)
Low noise figure: NF = 2.6dB (typ.)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
13.5
V
Gate 1-source voltage
VG1S
±8
V
Gate 2-source voltage
VG2S
±8
V
Drain current
ID
30
mA
Drain power dissipation
PD
100
mW
Channel temperature
Tch
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate 1 leakage current
IG1SS
VDS = 0, VG1S = ±6 V, VG2S = 0
±50
nA
Gate 2 leakage current
IG2SS
VDS = 0, VG1S = 0, VG2S = ±6 V
±50
nA
Drain-source voltage
V (BR) DSX
VG1S = -4 V, VG2S = -4 V
ID = 100 mA
13.5
V
Drain current
IDSS
VDS = 6 V, VG1S = 0, VG2S = 3 V
0
2
mA
Gate 1-source cut-off voltage
VG1S (OFF)
VDS = 6 V, VG2S = 3 V, ID = 100 mA
-1.5
1
V
Gate 2-source cut-off voltage
VG2S (OFF)
VDS = 6 V, VG1S = 3 V, ID = 100 mA
-1.0
1
V
Forward transfer admittance
Yfs
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f
= 1 kHz
21
mS
Input capacitance
Ciss
1.9
2.7
3.5
pF
Reverse transfer capacitance
Crss
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f
= 1 MHz
0.025
0.04
pF
Power gain
Gps
15
19
dB
Noise figure
NF
VDS = 6 V, VG2S = 3 V
ID = 10 mA, f = 800 MHz (Figure 1)
2.6
4.0
dB
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2K1B
Weight: 0.006 g (typ.)
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