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參數(shù)資料
| 型號(hào)： | 3SK290 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 90K |
| 代理商： | 3SK290 |
3SK290
3
Electrical Characteristics
(Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
12
—
—
V
I
D
= 200
m
A, V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
=
±
10
m
A, V
G2S
= V
DS
= 0
Gate 1 to source breakdown
voltage
V
(BR)G1SS
±
8
—
—
V
Gate 2 to source breakdown
voltage
V
(BR)G2SS
±
8
—
—
V
I
G2
=
±
10
m
A, V
G1S
= V
DS
= 0
Gate 1 cutoff current
I
G1SS
I
G2SS
I
DS(on)
—
—
±
100
nA
V
G1S
=
±
6 V, V
G2S
= V
DS
= 0
V
G2S
=
±
6 V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G1S
= 0.5 V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3 V,
I
D
m
A
V
DS
= 10 V, V
G1S
= 3 V,
I
D
m
A
V
DS
= 6 V, V
G2S
= 3 V,
I
D
V
DS
= 6 V, V
G2S
= 3V,
I
D
Gate 2 cutoff current
—
—
±
100
nA
Drain current
0.5
—
10
mA
Gate 1 to source cutoff voltage V
G1S(off)
–0.6
—
+0.5
V
Gate 2 to source cutoff voltage V
G2S(off)
0
—
+1.0
V
Forward transfer admittance
|y
fs
|
16
22
—
mS
Input capacitance
Ciss
1.2
1.8
2.2
pF
Output capacitance
Coss
0.7
1.2
1.4
pF
Reverse transfer capacitance
Crss
—
0.02
0.03
pF
Power gain
PG
17
19.3
—
dB
V
DS
= 4 V, V
G2S
= 3 V,
I
D
Noise figure
Note:
NF
—
2.3
2.8
dB
Marking is “ZJ–”.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK291 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) |
| 3SK291(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R 制造商:Toshiba America Electronic Components 功能描述:HF MOSFET N-ch 12.5V 0.03A UHF SMQ4 |
| 3SK291_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TV Tuner, UHF RF Amplifier Applications |
| 3SK292 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) |
| 3SK292(TE85R,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R |
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