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參數(shù)資料
| 型號(hào)： | 3SK322 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | 3SK322 |
3SK322
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage V
(BR)DSX
12
—
—
V
I
D
= 200 μA , V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
= ±10 μA, V
G2S
= V
DS
= 0
Gate 1 to source breakdown
voltage
V
(BR)G1SS
±8
—
—
V
Gate 2 to source breakdown
voltage
V
(BR) G2SS
±8
—
—
V
I
G2
= ±10 μA, V
G1S
= V
DS
= 0
Gate 1 cutoff current
I
G1SS
I
G2SS
I
DS(on)
—
—
±100
nA
V
G1S
= ±6 V, V
G2S
= V
DS
= 0
V
G2S
= ±6 V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G1S
= 0.75V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3V,
I
D
V
DS
= 10 V, V
G1S
= 3V,
I
D
V
DS
= 6 V, V
G2S
= 3V,
I
D
V
DS
= 6 V, V
G2S
= 3V,
I
D
Gate 2 cutoff current
—
—
±100
nA
Drain current
0.5
—
10
mA
Gate 1 to source cutoff voltage
V
G1S(off)
0
—
+1.0
V
Gate 2 to source cutoff voltage
V
G2S(off)
0
—
+1.0
V
Forward transfer admittance
|y
fs
|
16
20
—
mS
Input capacitance
Ciss
2.4
2.9
3.4
pF
Output capacitance
Coss
0.8
1.0
1.4
pF
Reverse transfer capacitance
Crss
—
0.023
0.04
pF
Power gain
PG
22
25
—
dB
V
DS
= 6 V, V
G2S
= 3V,
I
D
Noise figure
NF
—
1.0
1.8
dB
Power gain
PG
12
15
—
dB
V
DS
= 6 V, V
G2S
= 3V,
I
D
Noise figure
NF
—
3.2
4.5
dB
Noise figure
NF
—
2.8
3.5
dB
V
DS
= 6 V, V
G2S
= 3V,
I
D
Note:
Marking is “ZW–”
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