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參數(shù)資料
| 型號(hào)： | 469-01 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類(lèi)： | 橋式整流 |
| 英文描述： | Single Phase Bridge; Package: MD; IO/ Leg (A): 10; VR / Leg (V): 200; |
| 中文描述： | 10 A, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 204K |
| 代理商： | 469-01 |
SINGLE PHASE 10 AMP
RECTIFIER BRIDGES
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
469-01, 469-02, and 469-03
469-01,
469-02,
469-03
DESCRIPTION
APPEARANCE
This series of high-current single-phase bridge rectifiers are constructed with
hermetically sealed rectifiers with the same design and construction as used in
military applications for the utmost in reliability. They can also be optionally obtained
with formal military screened diodes that have been subjected to 100% screening and
military qualified to MIL-PRF-19500/469 that are ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 10 Amp rated rectifier
bridges with working peak reverse voltages from 200 to 600 volts for each leg use
diodes that are hermetically sealed with voidless-glass construction using an internal
“Category I” metallurgical bond.
Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including fast and ultrafast device types in both through-hole and
surface mount packages.
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Voidless hermetically sealed glass packages used
internally for each leg
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JANTX and JANTXV available per MIL-PRF-19500/469
Controlled Avalanche Characteristics
Surge ratings of 100 Amps
Conversion of single phase ac to dc current flow
Working Peak Reverse Voltages 200 to 600 V
Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65
oC to +150oC
Storage Temperature: -65
oC to +150oC
Maximum Avg Output Current: 10 Amps @ TC = 55°C
and 6 Amps @ TC = 100°C. Derate @ 88 mA /
oC
between 55°C and 100°C. Derate @ 120 mA/
oC
above 100°C.
Non-repetitive Forward Surge Current (8.3 ms half
sine): 100 Amps @ TC = 55°C
Solder temperatures (terminals): 260
oC for 10 s
(maximum)
CASE: Epoxy filled case with hermetically sealed
void-less hard glass rectifiers with Tungsten slugs
TERMINALS: Nickel plated brass with optional hot
Tin-Lead solder dip
MARKING: Part number on one side of case
POLARITY: Marked on body adjacent to terminals
(see terminal polarity marking on last page and
flattened corner on case for pin 1)
WEIGHT: 7.7 grams
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
MAXIMUM REVERSE
CURRENT PER LEG
IR @ VRWM
TC = 25°C
TC = 100°C
FORWARD
VOLTAGE
VF @ 15.7 A
(pk) @ 8.3 ms
Duty Cycle
≤ 2%
REVERSE
RECOVERY
trr
Note 3
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
Per Leg
VBR
@50
μA
VOLTS
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
AVERAGE
RECTIFIED
CURRENT
IO1 @
TC=+55
oC
Note 1
AMPS
AVERAGE
RECTIFIED
CURRENT
IO2 @
TC=+100
oC
Note 2
AMPS
μA
Volts
μs
469-01
240
200
10
6
2
125
1.35
2.5
469-02
460
400
10
6
2
125
1.35
2.5
469-03
660
600
10
6
2
125
1.35
2.5
NOTE 1:
Rated at TC = 55C with reference to metal case. Derate linearly at 88 mA/C between TC = 55C and TC = 100C
NOTE 2:
Derate linearly at 120 mA/C above TC = 100C.
NOTE 3:
IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A
NOTE 4:
Point at which TC is referenced shall be in metal part of case as shown in drawing on last page.
Microsemi
Scottsdale Division
Page 1
Copyright
2009
11-05-09 Rev B; 469-1.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 469-02 | Single Phase Bridge; Package: MD; IO/ Leg (A): 10; VR / Leg (V): 400; |
| 469-03 | Single Phase Bridge; Package: MD; IO/ Leg (A): 10; VR / Leg (V): 600; |
| JANTX469-02 | 10 A, SILICON, BRIDGE RECTIFIER DIODE |
| JANTX469-01 | 10 A, SILICON, BRIDGE RECTIFIER DIODE |
| JANTX469-03 | 10 A, SILICON, BRIDGE RECTIFIER DIODE |
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