參數(shù)資料
型號: 4AC12
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 3/7頁
文件大?。?/td> 48K
代理商: 4AC12
4AC12
3
Maximum Collector Dissipation Curve
6
4
2
0
50
100
150
Ambient temperature Ta (
°C)
Collector
power
dissipation
P
C
(W)
4 device operation
3 device operation
2 device operation
1 device operation
Note: Collector power dissipation of each devices
is identical.
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
4 device operation
3 device operation
2 device operation
1 device operation
10
3.0
1.0
0.3
Collector
current
I
C
(A)
0.1
0.03
0.01
1.0
50
10
0.5
2
20
5
Collector to emitter voltage VCE (V)
Ta = 25
°C
1 shot pulse
iC(peak)
IC(max)
DC
Operation
(T
C
=
25
°C)
PW
=
10
ms
1 ms
Area of Safe Operation
TC = 25°C
IB = 0
30 A
40
50
60
90
70
2.0
1.6
1.2
0.8
0.4
01
4
3
25
Collector
current
I
C
(A)
Collector to emitter voltage VCE (V)
Typical Output Characteristics
80
相關(guān)PDF資料
PDF描述
4AC21 Power Transistor Arrays
4AC22 Power Transistor Arrays
4AC23 Power Transistor Arrays
4AC24 Power Transistor Arrays
4AC25 Power Transistor Arrays
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