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參數(shù)資料
| 型號： | 4AK22 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Power MOS FET Array |
| 中文描述： | 硅N溝道功率MOS場效應(yīng)管陣列 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 36K |
| 代理商： | 4AK22 |
4AK22
3
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
120
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
100
AV
DS = 100 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
R
DS(on)
—
0.3
0.4
I
D = 1.5 A, VGS = 10 V*
1
resistance
—
0.35
0.55
I
D = 1.5 A, VGS = 4 V*
1
Forward transfer admittance
|y
fs|
2.0
3.5
—
S
I
D = 1.5 A, VDS = 10 V*
1
Input capacitance
Ciss
—
420
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
190
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
25
—
pF
Turn-on delay time
t
d(on)
—5
—ns
I
D = 1.5 A, VGS = 10 V,
Rise time
t
r
—
20
—
ns
R
L = 20
Turn-off delay time
t
d(off)
—
160
—
ns
Fall time
t
f
—40—ns
Body to drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
160
—
ns
I
F = 3 A, VGS = 0
dIF/dt = 50 A/
s
Note:
1. Pulse Test
See characteristic curves of 2SK1254(L), 2SK1254(S)
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