參數(shù)資料
型號(hào)： 4AK25
廠商： Hitachi,Ltd.
英文描述： Silicon N-Channel Power MOS FET Array
中文描述： 硅N溝道功率MOS場(chǎng)效應(yīng)管陣列
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 39K
代理商： 4AK25
4AK25
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.35
0.45
I
D = 1 A
V
GS = 10 V*
1
—
0.47
0.65
I
D = 1 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|
0.9
1.5
—
S
I
D = 1 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
140
—
pF
V
DS = 10 V
Output capacitance
Coss
—
70
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
20
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—3
—ns
I
D = 1 A
Rise time
t
r
—
12
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
50
—
ns
R
L = 30
Fall time
t
f
—30—ns
Body to drain diode forward
voltage
V
DF
—
1.1
—
V
I
F = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—70—
sI
F = 1.5 A, VGS = 0,
dIF/dt = 50 A/
s
Note:
1. Pulse Test
See characteristic curves of 2SK975
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