參數(shù)資料
型號: 4AM14
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel/P-Channel Complementary Power MOS FET Array(N溝道/P溝道功率MOSFET陣列)
中文描述: 硅N-Channel/P-Channel互補功率場效應晶體管陣列(不適用溝道/頁溝道功率MOSFET的陣列)
文件頁數(shù): 2/5頁
文件大小: 40K
代理商: 4AM14
4AM14
2
Outline
SP-12TA
1
G
S 3
5
G
8
G
12
G
2
D
4
D
9
D
11
D
S 6
S 7
S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
1
2
3
4
5
6
7
8
9
11
10
12
Absolute Maximum Ratings (Ta = 25
°C)
Ratings
Item
Symbol
Nch
Pch
Unit
Drain to source voltage
V
DSS
60
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
8–8
A
Drain peak current
I
D(pulse)*
1
32
–32
A
Body to drain diode reverse drain current
I
DR
8–8
A
Channel dissipation
Pch (Tc = 25
°C)*2 32
W
Channel dissipation
Pch*
2
4W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10 s, duty cycle ≤ 1%
2. 4 devices operation
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