參數(shù)資料
型號: 4AM15
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列)
中文描述: 硅N-Channel/P-Channel功率MOS FET陣列(不適用溝道/頁溝道功率MOSFET的陣列)
文件頁數(shù): 4/6頁
文件大小: 39K
代理商: 4AM15
4AM15
4
Electrical Characteristics (Ta = 25°C)
P Channel
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–200
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
–250
A
V
DS = –160 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–2.0
–4.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
0.7
0.9
I
D = –2 A, VGS = –10 V*
1
Forward transfer admittance
|y
fs|
2.0
3.0
S
I
D = –2 A
V
DS = –10 V*
1
Input capacitance
Ciss
920
pF
V
DS = –10 V
Output capacitance
Coss
290
pF
V
GS = 0
Reverse transfer capacitance
Crss
70
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—17
ns
I
D = –2 A
Rise time
t
r
—40
ns
V
GS = –10 V
Turn-off delay time
t
d(off)
—85
ns
R
L = 15
Fall time
t
f
—45
ns
Body to drain diode forward
voltage
V
DF
–1.0
V
I
F = –4 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
170
ns
I
F = –4 A, VGS = 0,
diF/dt = 100 A/s
Note
1. Pulse Test
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