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參數(shù)資料
| 型號： | 4GBU08F |
| 廠商： | International Rectifier |
| 元件分類： | 橋式整流 |
| 英文描述： | 4.0 Amps Single Phase Full Wave |
| 中文描述： | 四點(diǎn)〇安培單相全波 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 4GBU08F |
4GBU Series
2
Bulletin I2717 rev. G 05/02
www.irf.com
I
O
Maximum DC output current
4
A
T
C = 100°C, Resistive & inductive load
3.2
TC=100°C,Capacitiveload
I
FSM
Maximum peak, one-cycle
150
t = 10ms
non-repetitive surge current,
following any rated load condition
158
t = 8.3ms
T
J = 150°C
and with rated VRRM reapplied
I2t
Maximum I2t for fusing,
113
A2s
t = 10ms
initial T
J = TJ max
104
t = 8.3ms
V
FM
Maximum peak forward voltage
1.0
V
T
J = 25
o
C, I
FM = 4A
per diode
IRM
Typical peak reverse leakage
5
A
T
J = 25
o
C, 100% VRRM
curren t per diode
VRRM
Maximum repetitive peak
50 to 800
V
reversevoltagerange
Forward Conduction
Voltage
V
RRM , max repetitive
V
RMS , max RMS
I
RRM max.
I
RRM max.
Type number
Code
peak rev. voltage
voltage
@ rated V
RRM
@ rated V
RRM
T
J = TJ max.
T
J = TJ max.
T
J = 25°C
T
J = 150°C
V
A
4GBU
005
50
35
5
400
4GBU...F
01
100
70
5
400
02
200
140
5
400
04
400
280
5
400
06
600
420
5
400
08
800
560
5
400
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
4GBU
Unit
Conditions
T
J
Operatingandstorage
-55 to 150
o
C
Tstg
temperature range
R
thJC
Max. thermal resistance
4.2
°C/ W
DC rated current through bridge (1)
junction to case
R
thJA
Thermal resistance,
22
°C/ W
DC rated current through bridge (1)
junction to ambient
W
Approximateweight
4 (0.14)
g(oz)
T
MountingTorque
1.0
Nm
Bridge to Heatsink
9.0
Lb.in
Thermal and Mechanical Specifications
Parameters
4GBU
Unit
Conditions
Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum
heat transfer and bolt down using 3mm screw
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