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參數(shù)資料
| 型號： | 4GBU12 |
| 廠商： | International Rectifier |
| 英文描述： | 4.0 Amps Single Phase Bridge Rectifier(4 安培單向橋整流器) |
| 中文描述： | 四點(diǎn)〇安培單相橋式整流器（4安培單向橋整流器） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 115K |
| 代理商： | 4GBU12 |
4GBU Series
2
Preliminary Data Sheet rev. A I2717 11/00
www.irf.com
I
O
Maximum DC output current
4
A
T
C = 100°C, Resistive & inductive load
3.2
TC=100°C,Capacitiveload
I
FSM
Maximum peak, one-cycle
150
t = 10ms, 20ms
non-repetitive surge current,
following any rated load condition
158
t = 8.3ms, 16.7ms
T
J = 150°C
and with rated VRRM reapplied
I2t
Maximum I2t for fusing,
113
A2s
t = 10ms
initial T
J = TJ max
104
t = 8.3ms
V
FM
Maximum peak forward voltage
1.0
V
T
J = 25
o
C, I
FM = 4A
per diode
IRM
Typical peak reverse leakage
5
A
T
J = 25
o
C, 100% VRRM
curren t per diode
VRRM
Maximumrepetitivepeak
50 to 1200
V
reverse voltage range
Forward Conduction
Voltage
V
RRM , max repetitive
V
RSM , max non-repetitive
I
RRM max.
I
RRM max.
Type number
Code
peak rev. voltage
@ rated V
RRM
@ rated V
RRM
T
J = TJ max.
T
J = TJ max.
T
J = 25°C
T
J = 150°C
V
A
4GBU
005
50
80
5
400
01
100
150
5
400
02
200
300
5
400
04
400
500
5
400
06
600
700
5
400
08
800
900
5
400
10
1000
1100
5
400
12
1200
1300
5
400
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
4GBU
Unit
Conditions
T
J
Operatingandstorage
-55 to 150
o
C
Tstg
temperaturerange
R
thJC
Max. thermal resistance
4.2
°C/ W
DC rated current through bridge (1)
junction to case
R
thJA
Thermal resistance,
22
°C/ W
DC rated current through bridge (1)
junction to ambient
W
Approximateweight
4 (0.14)
g (oz)
Thermal and Mechanical Specifications
Parameters
4GBU
Unit
Conditions
Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum heat
transfer and bolt down using 3mm screw
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