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參數(shù)資料
| 型號： | 4MBI100T-060 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 4MBI100T-060 |
| 中文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-24 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 622K |
| 代理商： | 4MBI100T-060 |
H04-004-03
14
MS5F 5431
a
b
c
3.
Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ）
Symbols
Conditions
Maximum
Ratings
Units
VCES
Ic=1mA
600
V
VGES
±20
V
Ic
Duty=100 %
100
Ic pulse
1ms
200
A
IF
Duty=50 %
100
IF pulse
1ms
200
Pc
310
W
Tj
150
°C
Tstg
-40~ +125
°C
between terminal and copper base *1
between thermistor and others *2
Mounting
*3
-
3.5
N m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : Mounting 2.5~3.5 N m (M5)
4. Electrical characteristics ( at Tj= 25°Cunless otherwise specified)
Characteristics
Symbols
Conditions
min.
typ.
Max. Units
ICES
VGE =
0 V, VCE = 600 V
-
1.0
mA
IGES
VCE =
0 V, VGE = ±20 V
-
200
nA
VGE(th) VCE =
20 V, Ic =
100 mA
6.2
6.7
7.7
V
VCE(sat) VGE =
15 V
Chip
-
1.8
2.2
V
Ic =
100 A
Terminal
-
2.2
2.6
Input capacitance
Cies
VGE =
0 V
-
8500
-
Output capacitance
Coes
VCE =
10 V
-
1500
-
pF
Reverse transfer capacitance
Cres
f =
1 MHz
-
1300
-
ton
Vcc =
300 V
-
0.4
1.2
tr
Ic =
100 A
-
0.25
0.6
tr(i)
VGE = ±15 V
-
0.1
-
μ
s
toff
RG =
33 Ω
-
0.4
1.2
tf
-
0.04
0.45
IF =
100 A
Chip
-
1.9
2.3
V
Terminal
-
2.3
2.7
Reverse recovery time
trr
IF =
100 A
-
0.3
μ
s
Allowabe avalanche energy
during short circuit cutting off
PAV
Ic > 200A ,Tj = 125°C
55
-
mJ
-
5000
-
465
495
520
B
3305
3375
3450
K
5. Thermal resistance characteristics
Characteristics
min.
typ.
Max.
Rth(j-c) IGBT
-
0.400
FWD
-
1.02 °C/W
Rth(c-f) With thermal compound *
-
0.05
-
* This is the value which is defined mounting on the additional cooling fin
with thermal compound.
2500
R
T = 25°C
Thermal resistance (1 device)
T = 25/50°C
Viso
AC : 1min.
Symbols
Conditions
B value
Ω
T =100°C
Items
Units
Turn-off time
Contact Thermal resistance (1 device)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector Power Dissipation
Forward on voltage
(Non-repetitive)
Resistance
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Turn-on time
1 device
V
VF
Junction temperature
Storage temperature
Isolation
voltage
Screw
Torque
Items
Zero gate voltage
Collector current
Gate-Emitter leakage current
In
ve
rt
e
r
T
h
e
rm
is
to
r
4
a
b
c
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