參數(shù)資料
型號(hào)： 4N26TVM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 光電耦合器
英文描述： 6-Pin DIP Package Phototransistor Output Optocoupler; Package: DIP-W; No of Pins: 6; Container: Bulk
中文描述： 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝： DIP-6
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 258K
代理商： 4N26TVM
2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2
2
4NXXM,
H11AXM
—
General
Purpose
6-Pin
Phototransistor
Optocoupler
s
Absolute Maximum Ratings (T
A = 25°C unless otherwise specied)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical Characteristics (T
A = 25°C unless otherwise specied)
Individual Component Characteristics
Isolation Characteristics
*Typical values at TA = 25°C
Symbol
Parameter
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
-40 to +150
°C
TOPR
Operating Temperature
-40 to +100
°C
TSOL
Wave solder temperature (see page 8 for reow solder prole)
260 for 10 sec
°C
PD
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
250
mW
2.94
EMITTER
IF
DC/Average Forward Input Current
60
mA
VR
Reverse Input Voltage
6
V
IF(pk)
Forward Current – Peak (300s, 2% Duty Cycle)
3
A
PD
LED Power Dissipation @ TA = 25°C
Derate above 25°C
120
mW
1.41
mW/°C
DETECTOR
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
70
V
VECO
Emitter-Collector Voltage
7
V
PD
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
150
mW
1.76
mW/°C
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
VF
Input Forward Voltage
IF = 10mA
1.18
1.50
V
IR
Reverse Leakage Current
VR = 6.0V
0.001
10
A
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IF = 0
30
100
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100A, IF = 0
70
120
V
BVECO
Emitter-Collector Breakdown Voltage
IE = 100A, IF = 0
7
10
V
ICEO
Collector-Emitter Dark Current
VCE = 10V, IF = 0
1
50
nA
ICBO
Collector-Base Dark Current
VCB = 10V
20
nA
CCE
Capacitance
VCE = 0V, f = 1 MHz
8
pF
Symbol
Characteristic
Test Conditions
Min.
Typ.*
Max.
Units
VISO
Input-Output Isolation Voltage
f = 60Hz, t = 1 sec
7500
Vac(pk)
RISO
Isolation Resistance
VI-O = 500 VDC
1011
CISO
Isolation Capacitance
VI-O = &, f = 1MHz
0.2
2
pF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
4N26TV-M 制造商:Fairchild Semiconductor Corporation 功能描述:BULK / MOT TRANS OUTPUT, 0.4 INCH LEAD BEND, VDE
4N26V 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N26-V 功能描述:晶體管輸出光電耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N26VM 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N26V-M 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
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