- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30704 > 4N35DCJ (Texas Instruments, Inc.) COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS PDF資料下載
參數(shù)資料
| 型號： | 4N35DCJ |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS |
| 中文描述： | 兼容標(biāo)準(zhǔn)的TTL集成電路 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 4N35DCJ |
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS
D Gallium-Arsenide-Diode Infrared Source
Optically Coupled to a Silicon npn
Phototransistor
D High Direct-Current Transfer Ratio
D High-Voltage Electrical Isolation
1.5-kV, 2.5-kV, or 3.55-kV Rating
D High-Speed Switching
tr = 7 s, tf = 7 s Typical
D Typical Applications Include Remote
Terminal Isolation, SCR and Triac Triggers,
Mechanical Relays and Pulse Transformers
D Safety Regulatory Approval
UL/CUL, File No. E65085
absolute maximum ratings at 25
°C free-air temperature (unless otherwise noted)
Input-to-output peak voltage (8-ms half sine wave): 4N35
3.55 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N36
2.5 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N37
1.5 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35
2.5 kV
. . . . . . . . . . . . . . . . . . . . . . . . .
4N36
1.75 kV
. . . . . . . . . . . . . . . . . . . . . . . .
4N37
1.05 kV
. . . . . . . . . . . . . . . . . . . . . . . .
Collector-base voltage
70 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 1)
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-base voltage
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode reverse voltage
6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode forward current: Continuous
60 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (1
s, 300 pps)
3 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor continuous collector current
100 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) 25
°C free-air temperature:
Infrared-emitting diode (see Note 2)
100 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 3)
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous power dissipation at (or below) 25
°C lead temperature:
Infrared-emitting diode (see Note 4)
100 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 5)
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating temperature range, TA
–55
°C to 100°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–55
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
NOTES:
1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100
°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100
°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100
°C lead temperature at the rate of 1.33 mW/°C. Lead temperature is measured on the collector lead
0.8 mm (1/32 inch) from the case.
5. Derate linearly to 100
°C lead temperature at the rate of 6.7 mW/°C.
Copyright
1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
6
5
4
ANODE
CATHODE
NC
BASE
COLLECTOR
EMITTER
DCJ OR 6-TERMINAL DUAL-IN-LINE PACKAGE
(TOP VIEW)
4N35 only
NC – No internal connection
schematic
ANODE
CATHODE
NC
COLLECTOR
BASE
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4N35GV | Optocoupler with Phototransistor Output |
| 4N35GVSERIES | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 4N35MTA-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35MTB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35S1TA-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4N35FM | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N35F-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N35F-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N35FR2M | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N35FR2VM | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。