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參數(shù)資料
| 型號(hào)： | 4N35GVSERIES |
| 廠(chǎng)商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 中文描述： | 與光電晶體管光電耦合器輸出 |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 147K |
| 代理商： | 4N35GVSERIES |
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99
92
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
VCE – Collector Emitter Voltage ( V
)
96 11905
I
–
Collector
Current
(
mA
)
C
20mA
10mA
5mA
2mA
1mA
IF=50mA
Figure 12. Collector Current vs. Collector Emitter Voltage
110
0
0.2
0.4
0.6
0.8
1.0
V
–
Collector
Emitter
Saturation
V
oltage
(
V
)
CEsat
IC – Collector Current ( mA )
100
95 10972
CTR=50%
20%
10%
Figure 13. Collector Emitter Saturation Voltage vs.
Collector Current
0.01
0.1
1
10
0
200
400
600
800
1000
h
–
DC
Current
Gain
FE
IC – Collector Current ( mA )
100
95 10973
VCE=10V
5V
Figure 14. DC Current Gain vs. Collector Current
0.1
1
10
1
10
100
1000
CTR
–
Current
T
ransfer
Ratio
(
%
)
IF – Forward Current ( mA )
100
95 10976
VCE=20V
Figure 15. Current Transfer Ratio vs. Forward Current
0
5
10
15
0
10
20
30
40
50
IF – Forward Current ( mA )
20
95 10974
t
/
t
–
T
urn
on
/
T
urn
of
f
T
ime
(
s
)
of
f
m
on
Saturated Operation
VS=5V
RL=1kW
toff
ton
Figure 16. Turn on / off Time vs. Forward Current
02
4
6
IC – Collector Current ( mA )
10
95 10975
t
/
t
–
T
urn
on
/
T
urn
of
f
T
ime
(
s
)
of
f
m
on
Non Saturated
Operation
VS=10V
RL=100W
toff
ton
0
5
10
15
20
8
Figure 17. Turn on / off Time vs. Collector Current
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