參數(shù)資料
型號(hào)： 4N37-X001
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 光電耦合器
英文描述： Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-6
中文描述： Transistor Output Optocouplers Phototransistor Out Single CTR>100%
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 146K
代理商： 4N37-X001
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 16-Jan-12
2
Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Surge current
t
≤ 10 μs
IFSM
2.5
A
Power dissipation
Pdiss
70
mW
OUTPUT
Collector emitter breakdown voltage
VCEO
70
V
Emitter base breakdown voltage
VEBO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp
≤ 10 ms
ICM
100
mA
Output power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
t = 1 s
VISO
5000
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between emitter
and detector
≥ 0.4
mm
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Soldering temperature (1)
2 mm from case,
≤ 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (1)
IF = 10 mA
VF
1.2
1.5
V
IF = 10 mA, Tamb = - 55 °C
VF
0.9
1.3
1.7
V
Reverse current (1)
VR = 6 V
IR
0.1
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
OUTPUT
Collector emitter breakdown
voltage (1)
IC = 1 mA
4N35
BVCEO
30
V
4N36
BVCEO
30
V
4N37
BVCEO
30
V
4N38
BVCEO
80
V
Emitter collector breakdown
voltage (1)
IE = 100 μA
BVECO
7V
Collector base breakdown
voltage (1)
IC = 100 μA, IB = 1 μA
4N35
BVCBO
70
V
4N36
BVCBO
70
V
4N37
BVCBO
70
V
4N38
BVCBO
80
V
相關(guān)PDF資料
PDF描述
4N37S-TA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
4N37-X006 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N37-X007 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N37-X009 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N38 功能描述:晶體管輸出光電耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N38(SHORT) 制造商:Toshiba America Electronic Components 功能描述:PHOTOCOUPLER TRANS OUT 6-DIP
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