參數(shù)資料
型號(hào): 4N38M
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光電耦合器
英文描述: High Voltage Phototransistor Optocouplers
中文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝: PLASTIC, DIP-6
文件頁數(shù): 2/9頁
文件大小: 243K
代理商: 4N38M
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
2
4N38M,
H11D1
M,
H11D2M,
H11D3M,
MOC8204M
High
V
olta
g
e
Phototransistor
Optocoupler
s
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
All
-40 to +150
°C
TOPR
Operating Temperature
All
-40 to +100
°C
TSOL
Lead Solder Temperature (Wave Solder)
All
260 for 10 sec
°C
PD
Total Device Power Dissipation @ TA = 25°C
Derate Above 25°C
All
260
mW
3.5
mW/°C
EMITTER
IF
Forward DC Current(1)
All
80
mA
VR
Reverse Input Voltage(1)
All
6.0
V
IF(pk)
Forward Current – Peak (1s pulse, 300pps)(1)
All
3.0
A
PD
LED Power Dissipation @ TA = 25°C
(1)
Derate Above 25°C
All
150
mW
1.41
mW/°C
DETECTOR
PD
Power Dissipation @ TA = 25°C
All
300
mW
Derate linearly above 25°C
4.0
mW/°C
VCER
Collector to Emitter Voltage(1)
MOC8204M
400
V
H11D1M, H11D2M
300
H11D3M
200
4N38M
80
VCBO
Collector Base Voltage(1)
MOC8204M
400
V
H11D1M, H11D2M
300
H11D3M
200
4N38M
80
VECO
Emitter to Collector Voltage(1)
H11D1M, H11D2M,
H11D3M,
MOC8204M
7V
IC
Collector Current (Continuous)
All
100
mA
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