參數(shù)資料
型號: 4N38TVM
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光電耦合器
英文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝: PLASTIC, DIP-6
文件頁數(shù): 3/9頁
文件大小: 243K
代理商: 4N38TVM
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
3
4N38M,
H11D1
M,
H11D2M,
H11D3M,
MOC8204M
High
V
olta
g
e
Phototransistor
Optocoupler
s
Electrical Characteristics (T
A = 25°C unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics (TA = 25°C Unless otherwise specied.)
*All Typical values at TA = 25°C
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Unit
EMITTER
VF
Forward Voltage(2)
IF = 10mA
All
1.15
1.5
V
F
T
A
Forward Voltage
Temp. Coefcient
All
-1.8
mV/°C
BVR
Reverse Breakdown
Voltage
IR = 10A
All
6
25
V
CJ
Junction Capacitance
VF = 0V, f = 1MHz
All
50
pF
VF = 1V, f = 1MHz
65
pF
IR
Reverse Leakage
Current(2)
VR = 6V
All
0.05
10
A
DETECTOR
BVCER
Breakdown Voltage
Collector to Emitter(2)
RBE = 1M, IC = 1.0mA, IF = 0
MOC8204M
400
V
H11D1M/2M
300
H11D3M
200
BVCEO
No RBE, IC = 1.0mA
4N38M
80
BVCBO
Collector to Base(2)
IC = 100A, IF = 0
MOC8204M
400
V
H11D1M/2M
300
H11D3M
200
4N38M
80
BVEBO
Emitter to Base
IE = 100A, IF = 0
4N38M
7
V
BVECO
Emitter to Collector
IE = 100A, IF = 0
All
7
10
V
ICER
Leakage Current
Collector to Emitter(2)
(RBE = 1M)
VCE = 300V, IF = 0, TA = 25°C
MOC8204M
100
nA
VCE = 300V, IF = 0, TA = 100°C
250
A
VCE = 200V, IF = 0, TA = 25°C
H11D1M/2M
100
nA
VCE = 200V, IF = 0, TA = 100°C
250
A
VCE = 100V, IF = 0, TA = 25°C
H11D3M
100
nA
VCE = 100V, IF = 0, TA = 100°C
250
A
ICEO
No RBE, VCE = 60V, IF = 0,
TA = 25°C
4N38M
50
nA
Symbol
Characteristics
Test Conditions
Device
Min.
Typ.*
Max.
Units
EMITTER
CTR
Current Transfer
Ratio, Collector to
Emitter
IF = 10mA, VCE = 10V,
RBE = 1M
H11D1M/2M/3M,
MOC8204M
2 (20)
mA (%)
IF = 10mA, VCE = 10V
4N38M
2 (20)
VCE(SAT)
Saturation Voltage(2)
IF = 10mA, IC = 0.5mA,
RBE = 1M
H11D1M/2M/3M,
MOC8204M
0.1
0.40
V
IF = 20mA, IC = 4mA
4N38M
1.0
SWITCHING TIMES
tON
Non-Saturated
Turn-on Time
VCE = 10V, ICE = 2mA,
RL = 100
All
5
s
tOFF
Turn-off Time
All
5
s
相關(guān)PDF資料
PDF描述
4N38 Photocoupler(GaAs LED& Phototransistor)(光耦(包括GaAs LED和光晶體管))
4N38 STANDARD THRU HOLE CASE 730A-04
4N38V 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
4N38G 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
4N38AV 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
4N38V 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN-OUTPUT DC-INPUT OPTOCOUPLER
4N38-V 功能描述:晶體管輸出光電耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N38VM 制造商:Fairchild Semiconductor Corporation 功能描述:HIGH VOLTAGE TRANS OUTPUT, VDE - Bulk
4N38W 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N38X 制造商:ISOCOM 制造商全稱:ISOCOM 功能描述:OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT