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參數(shù)資料
| 型號： | 530DB583M000DG |
| 廠商： | SILICON LABORATORIES |
| 元件分類： | XO, clock |
| 英文描述： | CRYSTAL OSCILLATOR, CLOCK, 583 MHz, CMOS/TTL OUTPUT |
| 封裝： | ROHS COMPLIANT, SMD, 6 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 215K |
| 代理商： | 530DB583M000DG |
Si530/531
Rev. 1.1
5
Table 7. Absolute Maximum Ratings1
Parameter
Symbol
Rating
Units
Maximum Operating Temperature
TAMAX
85
C
Supply Voltage
VDD
–0.5 to +3.8
Volts
Input Voltage (any input pin)
VI
–0.5 to VDD + 0.3
Volts
Storage Temperature
TS
–55 to +125
C
ESD Sensitivity (HBM, per JESD22-A114)
ESD
2500
Volts
Soldering Temperature (Pb-free profile)2
TPEAK
260
C
Soldering Temperature Time @ TPEAK (Pb-free profile)2
tP
20–40
seconds
Notes:
1. Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional
operation or specification compliance is not implied at these conditions. Exposure to maximum rating conditions for
extended periods may affect device reliability.
www.silabs.com/VCXO for further information, including soldering profiles.
Table 8. Environmental Compliance
The Si530/531 meets the following qualification test requirements.
Parameter
Conditions/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002.3 B
Mechanical Vibration
MIL-STD-883F, Method 2007.3 A
Solderability
MIL-STD-883F, Method 203.8
Gross & Fine Leak
MIL-STD-883F, Method 1014.7
Resistance to Solvents
MIL-STD-883F, Method 2016
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