參數(shù)資料
型號(hào): 5429FCT53DTDB
廠商: Integrated Device Technology, Inc.
英文描述: PHOTOINTERRUPTER SLOT 3MM PCB
中文描述: 快速CMOS八進(jìn)制注冊(cè)收發(fā)器
文件頁數(shù): 3/8頁
文件大?。?/td> 125K
代理商: 5429FCT53DTDB
IDT29FCT52AT/BT/CT/DT, IDT29FCT/2052AT/BT/CT, IDT29FCT53AT/BT/CT
FAST CMOS OCTAL REGISTERED TRANSCEIVERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.1
3
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
NC = No Change
↑ = LOW-to-HIGH Transition
REGISTER FUNCTION TABLE
(1)
(Applies to A or B Register)
Inputs
Internal
DCP
CE
Q
Function
X
H
NC
Hold Data
L
L
Load Data
H
LH
2629 tbl 02
OUTPUT CONTROL
(1)
Internal
Y-Outputs
OE
Q
52/2052
53
Function
H
X
Z
Disable Outputs
L
H
Enable Outputs
LH
HL
NOTE:
2629 tbl 03
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High Impedance
CAPACITANCE (TA = +25
°C, f = 1.0MHz)
ABSOLUTE MAXIMUM RATINGS
(1)
2529 lnk 04
Symbol
Parameter(1)
Conditions
Typ.
Max. Unit
CIN
Input
Capacitance
VIN = 0V
6
10
pF
COUT
Output
Capacitance
VOUT = 0V
8
12
pF
NOTE:
1. This parameter is measured at characterization but not tested.
2640 lnk 05
Symbol
Rating
Commercial
Military
Unit
VTERM(2) Terminal Voltage
with Respect to
GND
–0.5 to +7.0
V
VTERM(3) Terminal Voltage
with Respect to
GND
–0.5 to
VCC +0.5
–0.5 to
VCC +0.5
V
TA
Operating
Temperature
0 to +70
–55 to +125
°C
TBIAS
Temperature
Under Bias
–55 to +125
–65 to +135
°C
TSTG
Storage
Temperature
–55 to +125
–65 to +150
°C
PT
Power Dissipation
0.5
W
IOUT
DC Output
Current
–60 to +120
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
VCC by +0.5V unless otherwise noted.
2. Input and VCC terminals only.
3. Outputs and I/O terminals only.
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