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參數(shù)資料
| 型號(hào)： | 5962-9460206QDA |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 運(yùn)算放大器 |
| 英文描述： | QUAD OP-AMP, 8500 uV OFFSET-MAX, 9.4 MHz BAND WIDTH, CDFP14 |
| 封裝： | CERAMIC, DFP-14 |
| 文件頁數(shù)： | 42/87頁 |
| 文件大?。?/td> | 1721K |
| 代理商： | 5962-9460206QDA |
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TLE207x, TLE207xA
EXCALIBUR LOW-NOISE HIGH-SPEED
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS181C FEBRUARY 1997 REVISED DECEMBER 2009
47
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
+
+
2 k
Ω
VCC +
VO
VCC
RS
Ground Shield
Picoammeters
Figure 3. Noise-Voltage Test Circuit
Figure 4. Input-Bias and Offset-
Current Test Circuit
+
VCC +
VO
VCC
IN
IN +
Cic
Cid
Figure 5. Internal Input Capacitance
typical values
Typical values presented in this data sheet represent the median (50% point) of device parametric performance.
input bias and offset current
At the picoampere bias current level typical of the TLE207x and TLE207xA, accurate measurement of the bias
current becomes difficult. Not only does this measurement require a picoammeter but test socket leakages can
easily exceed the actual device bias currents. To accurately measure these small currents, Texas Instruments
uses a two-step process. The socket leakage is measured using picoammeters with bias voltages applied but
with no device in the socket. The device is then inserted in the socket and a second test is performed that
measures both the socket leakage and the device input bias current. The two measurements are then
subtracted algebraically to determine the bias current of the device.
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| 5962-9461109H9A | 制造商: 功能描述: 制造商:undefined 功能描述: |
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| 5962-9461109HMC | 制造商:White Electronic Designs 功能描述:SRAM Module Asynchronous 16Mbit 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 5V, 20NS, 68 CQFP 0.88" SQ., 0.180" H - Bulk |
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