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參數(shù)資料
| 型號(hào)： | 5962-9688101QPA |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 比較器 |
| 英文描述： | DUAL COMPARATOR, 10000 uV OFFSET-MAX, 1400 ns RESPONSE TIME, CDIP8 |
| 封裝： | CERAMIC, DIP-8 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大?。?/td> | 483K |
| 代理商： | 5962-9688101QPA |
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TLV2352, TLV2352Y
LinCMOS
DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
SLCS011B – MAY 1992 – REVISED MARCH 1999
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D Wide Range of Supply Voltages
2 V to 8 V
D Fully Characterized at 3 V and 5 V
D Very-Low Supply-Current Drain
120
A Typ at 3 V
D Output Compatible With TTL, MOS, and
CMOS
D Fast Response Time . . . 200 ns Typ for
TTL-Level Input Step
D High Input Impedance ...1012 Typ
D Extremely Low Input Bias Current
5 pA Typ
D Common-Mode Input Voltage Range
Includes Ground
D Built-In ESD Protection
description
The TLV2352 consists of two independent,
low-power comparators specifically designed for
single power-supply applications and operates
with power-supply rails as low as 2 V. When
powered from a 3-V supply, the typical supply
current is only 120
A.
The TLV2352 is designed using the Texas Instruments LinCMOS
technology and therefore features an
extremely high input impedance (typically greater than 1012
), which allows direct interfacing with
high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup
resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic
wired-AND relationships. The TLV2352I is fully characterized at 3 V and 5 V for operation from – 40
°C to 85°C.
The TLV2352M is fully characterized at 3 V and 5 V for operation from – 55
°C to 125°C.
The TLV2352 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a
1000-V ESD rating using Human Body Model testing. However, care should be exercised in handling this device
as exposure to ESD may result in degradation of the device parametric performance.
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIO max
at 25
°C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
TSSOP
(PW)
PLASTIC
DIP
(U)
CHIP
FORM
(Y)
–40
°C to
85
°C
5 mV
TLV2352ID
—
TLV2352IP
TLV2352IPWLE
—
TLV2352Y
–55
°C to
125
°C
5 mV
—
TLV2352MFK
TLV2352MJG
—
TLV2352MU
TLV2352Y
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLV2352IDR).
The PW packages are only available left-ended taped and reeled (e.g., TLV2352IPWLE)
These devices have limited built-in protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
Copyright
1999, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments Incorporated.
OUT
IN +
IN –
symbol (each comparator)
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
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