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參數(shù)資料
| 型號(hào)： | 5962F0052301QXX |
| 廠商： | INTERSIL CORP |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, MBCY3 |
| 封裝： | METAL CAN, TO-206AB, 3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | 5962F0052301QXX |
2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certication.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Ofce Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil Ltd.
8F-2, 96, Sec. 1, Chien-kuo North,
Taipei, Taiwan 104
Republic of China
TEL: 886-2-2515-8508
FAX: 886-2-2515-8369
Die Characteristics
DIE DIMENSIONS
1270
m x 1778m (50 mils x 70 mils)
Thickness: 483
m ±25.4m (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si3N4) over Silox (SiO2)
Nitride Thickness: 4.0k
±1.0k
Silox Thickness: 12.0k
±4.0k
Top Metallization
Type: AlSiCu
Thickness: 16.0k
±2k
Substrate
EBHF, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<1.0 x 105 A/cm2
Transistor Count
26
Metallization Mask Layout
IS-1009RH
ADJ
V-
V+
IS-1009RH
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