參數(shù)資料
型號(hào): 5962F9553601QXA
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類(lèi): 運(yùn)算放大器
英文描述: OP-AMP, 7000 uV OFFSET-MAX, 200 MHz BAND WIDTH, CDSO10
封裝: CERAMIC, SOIC-10
文件頁(yè)數(shù): 11/24頁(yè)
文件大小: 797K
代理商: 5962F9553601QXA
20159513
FIGURE 6. The LM7171 Driving a 150 pF Load
with a 50
Ω Isolation Resistor
Power Dissipation
The maximum power allowed to dissipate in a device is de-
fined as:
P
D = (TJ(max) TA)/θJA
Where
PD
is the power dissipation in a device
T
J(max)
is the maximum junction temperature
T
A
is the ambient temperature
θ
JA
is the thermal resistance of a particular package
For example, for the LM7171 in a Ceramic SOIC package, the
maximum power dissipation at 25°C ambient temperature is
680 mW.
Thermal resistance,
θ
JA, depends on parameters such as die
size, package size and package material. The smaller the die
size and package, the higher
θ
JA becomes. The 8-pin DIP
package has a lower thermal resistance (106°C/W) than that
of the Ceramic SOIC (182°C/W). Therefore, for higher dissi-
pation capability, use an 8-pin DIP package.
The total power dissipated in a device can be calculated as:
P
D = PQ + PL
P
Q is the quiescent power dissipated in a device with no load
connected at the output. P
L is the power dissipated in the de-
vice with a load connected at the output; it is not the power
dissipated by the load.
Furthermore,
P
Q:
= supply current × total supply voltage with no load
P
L:
= output current × (voltage difference between sup-
ply voltage and output voltage of the same side of
supply voltage)
For example, the total power dissipated by the LM7171 with
V
S = ±15V and output voltage of 10V into 1 kΩ is
P
D
= P
Q + PL
= (6.5 mA) × (30V) + (10 mA) × (15V 10V)
= 195 mW + 50 mW
= 245 mW
Application Circuit
Fast Instrumentation Amplifier
20159514
20159580
Multivibrator
20159515
20159581
19
www.national.com
LM7171QML
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