參數(shù)資料
型號(hào): 5962H1024201KXC
元件分類(lèi): 比較器
英文描述: QUAD COMPARATOR, 2000 uV OFFSET-MAX, 25000 ns RESPONSE TIME, CDSO16
封裝: 0.300 X 0.400 INCH, 0.120 INCH HEIGHT, HERMETIC SEALED, CERAMIC, SOIC-16
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 78K
代理商: 5962H1024201KXC
SCD5910 Rev B
FEATURES
Single power supply operation at 3.3V or 5.0V
Radiation performance
- Total dose:
>1Mrad(Si); Dose rate = 50 - 300 rads(Si)/s
- ELDRS Immune
- SEL Immune
> 100 MeV-cm2/mg
- Neutron Displacement Damage
>1014 neutrons/cm2
Short Circuit Tolerant
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC
- 16-pin, 0.3"W x 0.4" L x 0.12"Ht SOIC
- Typical Weight 1.2 grams
DSCC SMD 5962-10242 pending
RadHard-by-Design
GENERAL DESCRIPTION
Aeroflex’s RHD5910 is a radiation hardened, single supply, quad comparator in a 16-pin SOIC package.
The RHD5910 design uses specific circuit topology and layout methods to mitigate total ionizing dose
effects and single event latchup. These characteristics make the RHD5910 especially suited for the harsh
environment encountered in Deep Space missions. It is guaranteed operational from -55°C to +125°C.
Available screened in accordance with MIL-PRF-38534 Class K, the RHD5910 is ideal for demanding
military and space applications.
ORGANIZATION AND APPLICATION
The RHD5910 quad comparator is intended for operation with dynamic signals on either or both inputs.
Comparison is ’continuous’, that is, the circuit functions as high gain open loop amplifiers with a digital
output. For slow input signals with small input differences the comparators can be expected to respond to
small noise signals at the inputs. Feedback hysteresis is the responsibility of the user to avoid ’chattering’
on system noise.
The comparator will accept signals anywhere in the included power supply range. The circuit delay is
specified for a half-volt single ended or differential input step of either polarity ending in an input polarity
reversal of 10mV. See Switching Diagrams.
CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant
to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode
protected
The devices will not latch with SEU events above 100 Mev-cm2/mg. Total dose degradation is minimal to
above 1Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 1014
neutrons per cm2 range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU
effects are application dependant.
Standard Products
March 8, 2011
www.aeroflex.com/RHDseries
RHD5910 Quad Comparator
Preliminary
相關(guān)PDF資料
PDF描述
5962-3812804MPA 3-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, CDIP8
5962-3812804MGC 3-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, MBCY8
5962-7800303MGA OP-AMP, 6000 uV OFFSET-MAX, MBCY8
5962-7801301MGA BUFFER AMPLIFIER, MBCY8
5962-8508701X OP-AMP, 3000 uV OFFSET-MAX, CBCY12
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