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參數(shù)資料
| 型號： | 5962L8771002VPA |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運算放大器 |
| 英文描述： | DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP8 |
| 封裝： | CERAMIC, DIP-8 |
| 文件頁數(shù)： | 25/25頁 |
| 文件大?。?/td> | 899K |
| 代理商： | 5962L8771002VPA |
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2:
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax =(TJmax -TA)/θJA
or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15V, continuous short-circuits can exceed the power
dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 4: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+voltage level (or to ground for a large overdrive) for the time duration
that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value
greater than 0.3V (at 25C).
Note 5: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the outputso
no loading change exists on the input lines.
Note 6: The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V (at 25C). The upper end of the
common-mode voltage range is V+ 1.5V (at 25C), but either or both inputs can go to +32V without damage, independent of the magnitude of V+.
Note 7: Human body model, 1.5 k
in series with 100 pF.
Note 8: Guaranteed by input offset voltage.
Note 9: Guaranteed parameter not tested.
Note 10: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in Mil-Std-883, Method 1019
LM158QML
www.national.com
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| 5962-8771002VXA | DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDSO10 |
| 5962L8771002VXA | DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDSO10 |
| 5962-87717023A | 16-CHANNEL, SGL ENDED MULTIPLEXER, CQCC28 |
| 5962-8771702XA | 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP17 |
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