參數(shù)資料
型號(hào): 5962R9581201TXX
廠商: INTERSIL CORP
元件分類: 多路復(fù)用及模擬開(kāi)關(guān)
英文描述: DUAL 2-CHANNEL, DBL POLE SGL THROW SWITCH, CDFP14
封裝: CERAMIC, DFP-14
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 26K
代理商: 5962R9581201TXX
2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certication.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Ofce Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Die Characteristics
DIE DIMENSIONS:
(2130
m x 1930m x 279m ±25.4m)
84 x 76 x 11mils
±1mil
METALLIZATION:
Type: Al
Thickness: 12.5k
±2k
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Gold
PASSIVATION:
Type: Silox (SiO2)
Thickness: 8k
±1k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
76
PROCESS:
Metal Gate CMOS, Dielectric Isolation
Metallization Mask Layout
HS-302RH-T
D3
D1
S1
IN1
NC
GND
V-
D4
D2
S2
IN2
S3
V+
S4
HS-302RH-T
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