參數(shù)資料
型號: 5962R9679801QIA
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 比較器
英文描述: DUAL COMPARATOR, 6800 uV OFFSET-MAX, 80 ns RESPONSE TIME, MBCY10
封裝: METAL CAN, TO-100, 10 PIN
文件頁數(shù): 16/18頁
文件大小: 493K
代理商: 5962R9679801QIA
MDLM119-X-RH REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: POST RADIATION LIMITS +25 C (SEE NOTE 5)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
Vcm = 0V
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
Iib
Input Bias
Current
+Vcc = +15V
5
1000
nA
1
Vcc = 5V
2, 5
1000
nA
1
Vio
Input Offset
Voltage
Vcc = 5V, Vcm = 1V, Rs < 5K
2, 5
-4.0
4.0
mV
1
Vcc = 5V, Vcm = 3V, Rs < 5K
2, 5
-4.0
4.0
mV
1
+Vcc = +15V, Vcm = 12V, Rs < 5K
5
-4.0
4.0
mV
1
+Vcc = +15V, Vcm = -12V, Rs < 5K
5
-4.0
4.0
mV
1
Iio
Input Offset
Current
Vcc = 5V, Vcm = 1V
2, 5
-150
150
nA
1
Vcc = 5V, Vcm = 3V
2, 5
-150
150
nA
1
+Vcc = +15V, Vcm = 12V
5
-150
150
nA
1
+Vcc = +15V, Vcm = -12V
5
-150
150
nA
1
Note 1:
Vin > 8mV at extremes for Ileak and Vin < -8mV at extremes for Vsat (Vin to exceed
Vos).
Note 2:
5 Volt differential across +Vcc and -Vcc.
Note 3:
Parameter guaranteed by Vio and Iio tests.
Note 4:
K = V/mV.
Note 5:
Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics except as listed in the Post Radiation Limits Table. These
parts may be dose rate sensitive in a space environment and demonstrate enhanced low
dose rate effect. Radiation end point limits for the noted parameters are guaranteed
only for the conditions as specified in MIL-STD-883, Method 1019.5, Condition A.
7
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