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參數(shù)資料
| 型號(hào)： | 5KP7.0A-E3/51 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | 5KP7.0A-E3/51 |
Vishay General Semiconductor
5KP5.0 thru 5KP188A
Document Number 88308
20-Jun-06
www.vishay.com
1
TRANSZORB Transient Voltage Suppressors
FEATURES
P600, glass passivated chip junction
Available in Unidirectional polarity only
5000 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Typical ID less than 1 A V(BR) above 10 V rating
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Case Style P600
MAJOR RATINGS AND CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
5000 W
PD
8.0 W
IFSM
500 A
Tj max.
175 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1)
PPPM
5000
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
see next table
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)
PD
8.0
W
Peak forward surge current 8.3 ms single half sine-wave (Fig. 5)
IFSM
600
A
Instantaneous forward voltage at 100 A (2)
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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