參數(shù)資料
型號: 5SDA06P3826
廠商: ABB SWITZERLAND LTD SEMICONDUCTORS
元件分類: 整流器
英文描述: 600 A, 3800 V, SILICON, RECTIFIER DIODE
封裝: P1, 1 PIN
文件頁數(shù): 3/3頁
文件大?。?/td> 46K
代理商: 5SDA06P3826
5SDA 06P38
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DA/129/04 Jul-10
3 of 3
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDA 06P38..
5SDA 06P32..
3 800
3 200
V
VRSM
Non-repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDA 06P38..
5SDA 06P32..
3 800
3 200
V
IFAVm
Average forward current
Tc = 85 °C
600
A
IFRMS
RMS forward current
Tc = 85 °C
942
A
IRRM
Repetitive reverse current
VR = VRRM
50
mA
tp = 8.3 ms
8 100
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
7 600
A
tp = 8.3 ms
273 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
289 000
A
2s
Tj = 45 °C
70
kW
PRSM
Maximum avalanche power
dissipation
tp = 20 s, single pulse
Tj = 160 °C
50
kW
Tjmin -Tjmax
Operating temperature range
-40 ÷ 160
°C
TSTG
Storage temperature range
-40 ÷ 160
°C
Unless otherwise specified Tj = 160 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
1.010
V
rT
Forward slope resistance
IF1 = 800 A, IF2 = 2 400 A
0.720
m
VFM
Maximum forward voltage
IFM = 1 800 A, Tj = 25 °C
2.000
V
Rthjc
Thermal resistance junction to case
60
K/kW
Unless otherwise specified Tj = 160 °C
Notes:
相關(guān)PDF資料
PDF描述
5SDA06P3836 600 A, 3800 V, SILICON, RECTIFIER DIODE
5SDA06P3846 600 A, 3800 V, SILICON, RECTIFIER DIODE
5SDA06P3216 600 A, 3200 V, SILICON, RECTIFIER DIODE
5SDA06P3226 600 A, 3200 V, SILICON, RECTIFIER DIODE
5SDA06P3816 600 A, 3800 V, SILICON, RECTIFIER DIODE
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