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參數(shù)資料
| 型號(hào)： | 5SDA09P2023 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 850 A, 2000 V, SILICON, RECTIFIER DIODE |
| 封裝： | P1, 1 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 46K |
| 代理商： | 5SDA09P2023 |
5SDA 09P23
TS - DA/126/04 Jul-10
1 of 3
5SDA 09P23
Old part no. DA 805-850-23
Avalanche Diode
Properties
Key Parameters
§
Low forward voltage drop
VRRM
=
2 300
V
§
Avalanche reverse characteristics
IFAVm
=
850
A
§
Guaranteed maximum avalanche power dissipation
IFSM
=
13 500 A
§
Version with or without lead
VTO
=
0.830
V
§
Both polarity options
rT
=
0.300
m
§
High operational reliability
Types
Old part no.
VRRM
version
5SDA 09P2313
5SDA 09P2013
5SDA 09P2323
5SDA 09P2023
5SDA 09P2333
5SDA 09P2033
5SDA 09P2343
5SDA 09P2043
DA 805S-850-23
DA 805S-850-20
DA 805S-850R-23
DA 805S-850R-20
DA 805-850-23
DA 805-850-20
DA 805-850R-23
DA 805-850R-20
2 300 V
2 000 V
2 300 V
2 000 V
2 300 V
2 000 V
2 300 V
2 000 V
without lead
anode on the base
without lead
cathode on the base
with lead
anode on the base
with lead
cathode on the base
Conditions:
Tj = -40 ÷ 160 °C,
half sine waveform,
f = 50 Hz
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
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| 5SDA09P2033 | 850 A, 2000 V, SILICON, RECTIFIER DIODE |
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| 5SDA09P2323 | 850 A, 2300 V, SILICON, RECTIFIER DIODE |
| 5SDA09P2333 | 850 A, 2300 V, SILICON, RECTIFIER DIODE |
| 5SDA09P2313 | 850 A, 2300 V, SILICON, RECTIFIER DIODE |
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