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參數(shù)資料
| 型號(hào)： | 5SDD20F4800 |
| 廠(chǎng)商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | 5SDD20F4800 |
5SDD 20F5000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 01
page 2 of 4
On-state
IFAVM
Max. average on-state current
1850 A
Half sine wave, TC = 90°C
IFRMS
Max. RMS on-state current
2900 A
IFSM
Max. peak non-repetitive
23500 A
tp
=
10 ms Tj =
160°C
surge current
24300 A
tp
=
8.3 ms After surge:
I
2t
Limiting load integral
2760 kA
2stp =
10 ms VD = VR = 0V
2460 kA
2stp =
8.3 ms
VF
On-state voltage
2.13 V
IF
=
4000 A
VF0
Threshold voltage
0.99 V
IF
=
2500 - 7500 A
Tj =
160°C
rF
Slope resistance
0.282 m
Switching
Qrr
Recovery charge
min
3800 As
diF/dt = -30A/s
VR = 200 V
max
5200 As
IFRM = 1000A
Tj = 160°C
Thermal
Tj max
Max. junction temperature
160°C
Tj stg
Storage temperature range
-40...175°C
RthJC
Thermal resistance
30 K/kW
Anode side cooled
junction to case
30 K/kW
Cathode side cooled
15 K/kW
Double side cooled
RthCH
Thermal resistance case to
8 K/kW
Single side cooled
heat sink
4 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
τ
i1
2
3
4
Ri(K/kW)
8.96
4.66
1.02
0.34
τi(s)
0.4078
0.0643
0.0051
0.0012
0.001
0.010
0.100
1.000
10.000
t [s]
0
5
10
15
20
ZthJC [K/kW]
DF
2
180° sine:
add 1.5 K/kW
180° rectangular: add 2 K/kW
120° rectangular: add 3 K/kW
60° rectangular: add 5 K/kW
Fm = 20..24 kN
Double-side cooling
Fig. 1 Transient thermal impedance junction to case
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