參數(shù)資料
型號: 5SDD38F1800
廠商: ABB SWITZERLAND LTD SEMICONDUCTORS
元件分類: 整流器
英文描述: 3730 A, 1800 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 2/5頁
文件大?。?/td> 72K
代理商: 5SDD38F1800
5SDD 38F2000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/158/05 Jul-10
2 of 5
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = 0 ÷ 190 °C
5SDD 38F2000
5SDD 38F1800
2 000
1 800
V
IFAVm
Average forward current
Tc = 85 °C
3 730
A
IFRMS
RMS forward current
Tc = 85 °C
5 859
A
IRRM
Repetitive reverse current
VR = VRRM
60
mA
tp = 8.3 ms
42 700
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse, Tj = 25 °C
tp = 10 ms
40 000
A
tp = 8.3 ms
36 000
A
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
34 000
A
tp = 8.3 ms
7 577 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse, Tj = 25 °C
tp = 10 ms
8 000 000
A
2s
tp = 8.3 ms
5 474 000
A
2s
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
5 780 000
A
2s
Tjmin -Tjmax
Operating temperature range
0 ÷ 190
°C
TSTG
Storage temperature range
-40 ÷ 190
°C
Unless otherwise specified Tj = 190 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
0.915
V
rT
Forward slope resistance
IF1 = 5 969 A, IF2 = 17 907 A
0.088
m
VFM
Maximum forward voltage
IFM = 4 000 A
1.225
V
Qrr
Recovered charge
VR = 100 V, IFM = 2000 A, di/dt = -30 A/s
2 900
C
Unless otherwise specified Tj = 190 °C
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