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參數(shù)資料
| 型號： | 5SDD41H3800 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 4136 A, 3800 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 5SDD41H3800 |
5SDD 41H4000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/156/05 Jul-10
2 of 7
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDD 41H4000
5SDD 41H3800
4 000
3 800
V
IFAVm
Average forward current
Tc = 85 °C
4 136
A
IFRMS
RMS forward current
Tc = 85 °C
6 497
A
IRRM
Repetitive reverse current
VR = VRRM
100
mA
tp = 8.3 ms
49 000
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
46 000
A
tp = 8.3 ms
10 020 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
10 580 000
A
2s
Tjmin -Tjmax
Operating temperature range
-40 ÷ 160
°C
TSTG
Storage temperature range
-40 ÷ 160
°C
Unless otherwise specified Tj = 160 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
0.905
V
rT
Forward slope resistance
IF1 = 6 283 A, IF2 = 18 850 A
0.109
m
VFM
Maximum forward voltage
IFM = 4 000 A
1.310
V
Qrr
Recovered charge
4 600
C
IrrM
Reverse recovery
maximum current
340
A
trr
Reverse recovery time
VR = 100 V,
IFM = 2000 A,
diF/dt = -30 A/s
26
s
Unless otherwise specified Tj = 160 °C
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