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參數(shù)資料
| 型號： | 5SDD48H3200 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 4700 A, 3200 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 236K |
| 代理商： | 5SDD48H3200 |
5SDD 48H3200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1182-00 Sept. 07
page 3 of 6
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Operating junction
temperature range
Tvj
-40
160
°C
Storage temperature range
Tstg
-40
160
°C
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Thermal resistance junction
to case
Rth(j-c)
Double-side cooled
Fm = 45...55 kN
8
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 45...55 kN
14.5
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 45...55 kN
18.0
K/kW
Thermal resistance case to
heatsink
Rth(c-h)
Double-side cooled
Fm = 45...55 kN
2.5
K/kW
Rth(c-h)
Single-side cooled
Fm = 45...55 kN
5.0
K/kW
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
th
c)
-
th(j
∑
=
i
τ
i
1
2
3
4
Rth i(K/kW)
4.533
2.255
0.868
0.345
τ
i(s)
0.4406
0.1045
0.0092
0.0022
Fig. 1
Transient thermal impedance junction-to-case
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